UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application
dc.contributor.author
hal.structure.identifier | LE BOULBAR, E
|
dc.contributor.author
hal.structure.identifier | MILLON, E
|
dc.contributor.author | NTSOENZOK, E |
dc.contributor.author
hal.structure.identifier | HAKIM, B
|
dc.contributor.author
hal.structure.identifier | SEILER, Wilfrid
|
dc.contributor.author
hal.structure.identifier | BOULMER-LEBORGNE, C
|
dc.contributor.author
hal.structure.identifier | PERRIÈRE, J
|
dc.date.accessioned | 2015 |
dc.date.available | 2015 |
dc.date.issued | 2012 |
dc.date.submitted | 2015 |
dc.identifier.issn | 0925-3467 |
dc.identifier.uri | http://hdl.handle.net/10985/10075 |
dc.description.abstract | Undoped and Nd-doped titanium dioxide anatase and rutile films have been grown by pulsed-laser deposition at 700 °C under 0.1 mbar O2. By selecting adequate substrates, TiO2 films doped with 1, 2 or 5 at.% Nd were grown and constituted with polycrystalline rutile, highly oriented (2 0 0) rutile film, or oriented (0 0 4) anatase. An UV to NIR photon conversion is evidenced in the films. Indeed, intense and well-resolved emission lines from Nd3+ have been observed upon excitation above the TiO2 bandgap at room temperature. The sensitised emission of Nd3+ is found to be much efficient in rutile than in anatase structure. Low temperature photoluminescence measurements lead to fine resolved peaks corresponding to the Nd3+ 4f transitions with different spectral characteristic according to the host matrix used. Photoluminescence dependence temperature evidences that the light emission from Nd3+ in anatase-based films is probably influenced by the presence of self-trapped excitons or by orbital interaction. Mechanisms of sensitisation host to Nd3+ are proposed for both matrixes. Finally, the Nd dopant concentration and the microstructure of TiO2 rutile films are found to affect the photoluminescence emission intensity. Rutile film (2 0 0) oriented is the most adapted host matrix to sensitise 1 at.% Nd3+ ions for an emission around 1064 nm making such Nd-doped layers interesting for photon conversion by down shifting process. |
dc.language.iso | en |
dc.publisher | Elsevier |
dc.rights | Post-print |
dc.subject | Titanium dioxide |
dc.subject | Anatase |
dc.subject | Rutile |
dc.subject | Neodymium |
dc.subject | Photoluminescence |
dc.subject | Down shifting |
dc.title | UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application |
dc.identifier.doi | 10.1016/j.optmat.2012.02.033 |
dc.typdoc | Article dans une revue avec comité de lecture |
dc.localisation | Centre de Paris |
dc.subject.hal | Sciences de l'ingénieur: Matériaux |
dc.subject.hal | Sciences de l'ingénieur: Mécanique |
ensam.audience | Internationale |
ensam.page | 1419–1425 |
ensam.journal | Optical Materials |
ensam.volume | 34 |
hal.identifier | hal-01202536 |
hal.version | 1 |
hal.submission.permitted | updateMetadata |
hal.status | accept |