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dc.contributor.authorVASIN, Andriy
dc.contributor.authorGOMENIUK, Yuri
dc.contributor.authorRUSAVSKY, Audrey
dc.contributor.authorNAZAROV, Alexey N.
dc.contributor.authorLYSENKO, V.S.
dc.contributor.authorLYTVYN, Petro M.
dc.contributor.authorGONTAR, O.G.
dc.contributor.authorSTARIK, Sergii P.
dc.contributor.author
 hal.structure.identifier
ASHOK, S.
127049 Department of Chemistry, The Pennsylvania State University
dc.contributor.author
 hal.structure.identifier
NOUVEAU, Corinne
127742 Laboratoire Bourguignon des Matériaux et Procédés [LABOMAP]
dc.date.accessioned2015
dc.date.available2017
dc.date.issued2013
dc.date.submitted2013
dc.date.submitted2015
dc.identifier.issn1610-1634
dc.identifier.urihttp://hdl.handle.net/10985/10088
dc.description.abstractAmorphous carbon rich a-SiC:H films were deposited on silicon substrates by RF-magnetron sputtering of SiC target in argon/methane gas mixture. The principal focus of this study was investigation of the effect of thermal oxidation on structure and morphology reconstruction in a-SiC:H amorphous network. The density of the films was varied over the range 1.6-2.2 g/cm2 by varying the magnetron discharge power. The local nano- and micro-scale surface morphology and chemical composition distribution were examined by atomic force microscopy, scanning electron microscopy equipped with Auger electron scanning system and optical profilometry. It was found that partial oxidation leads to local structure reconstruction accompanied by transformation of mechanical stresses from compressive to tensile. Formation of carbon-enriched nano- and micro-scale regions was observed after oxidation in low density samples. We attrribute these morphological defects to migration and precipitation of carbon species released in the process of oxidation of the SiC amorphous network. The mechanism of tensile stresses generation is also discussed.
dc.description.sponsorshipScience and Technology Center of Ukraine, project No. 5513, National Academy of Science project No. 2-2-15-28 and Arts et Métiers ParisTech (invited professor)
dc.language.isoen
dc.publisherWiley
dc.rightsPost-print
dc.subjectAmorphous SiC films
dc.subjectMorphological defects
dc.subjectOxidation
dc.titleNano- and micro-scale morghological defects in oxidized a-SiC: H thin films
ensam.embargo.terms2 years
dc.identifier.doi10.1002/pssc.201200861
dc.typdocArticle dans une revue avec comité de lecture
dc.localisationCentre de Cluny
dc.subject.halChimie: Matériaux
dc.subject.halPhysique: matière Condensée: Science des matériaux
ensam.audienceInternationale
ensam.page619-623
ensam.journalphysica status solidi (c)
ensam.volume10
ensam.issue4
hal.identifierhal-02544510
hal.version1
hal.date.transferred2020-04-16T12:05:40Z
hal.submission.permittedtrue
hal.statusaccept
dc.identifier.eissn1610-1642


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