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dc.contributor.author
 hal.structure.identifier
NISTOR, M
240543 National Institute for Laser, Plasma and Radiation Physics [INFLPR]
dc.contributor.author
 hal.structure.identifier
MILLON, E
955 Groupe de recherches sur l'énergétique des milieux ionisés [GREMI]
dc.contributor.author
 hal.structure.identifier
CACHONCINLLE, C
955 Groupe de recherches sur l'énergétique des milieux ionisés [GREMI]
dc.contributor.author
 hal.structure.identifier
SEILER, Wilfrid
86289 Laboratoire Procédés et Ingénierie en Mécanique et Matériaux [PIMM]
dc.contributor.author
 hal.structure.identifier
JEDRECY, N.
101592 Institut des Nanosciences de Paris [INSP]
dc.contributor.author
 hal.structure.identifier
HEBERT, C
101592 Institut des Nanosciences de Paris [INSP]
dc.contributor.authorPERRIERE, J.
dc.date.accessioned2015
dc.date.available2016
dc.date.issued2015
dc.date.submitted2015
dc.identifier.issn0022-3727
dc.identifier.urihttp://hdl.handle.net/10985/10360
dc.description.abstractTransparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display the wurtzite phase. Different epitaxial relationships between films and substrate as a function of growth pressure and substrate temperature were evidenced by asymmetric x-ray diffraction measurements. By varying PLD growth conditions, the films can be tuned to have either metallic or semiconductor characteristics, with good optical transmittance in the visible range. Moreover, a low-temperature metal-insulator transition may be observed in Nd-doped ZnO films grown under low oxygen pressure. Resistivities as low as 6 × 10−4 Ω cm and 90% optical transmittance in the visible range and different near-infrared transmittance are obtained with approximately 1.0–1.5 at.% Nd doping and growth temperature of approximately 500 °C.
dc.language.isoen
dc.publisherIOP Publishing
dc.rightsPost-print
dc.subjectzinc oxide
dc.subjectpulsed laser deposition
dc.subjectthin films
dc.subjectoptical properties
dc.subjectoptical properties
dc.subjectmetal-insulator transition
dc.titleTransparent conductive Nd-doped ZnO thin films
ensam.embargo.terms3 Months
dc.identifier.doi10.1088/0022-3727/48/19/195103
dc.typdocArticle dans une revue avec comité de lecture
dc.localisationCentre de Paris
dc.subject.halSciences de l'ingénieur: Matériaux
dc.subject.halSciences de l'ingénieur: Mécanique
ensam.audienceInternationale
ensam.page195103 (9pp)
ensam.journalJournal of Physics D: Applied Physics
ensam.volume48
hal.identifierhal-01218114
hal.version1
hal.submission.permittedupdateMetadata
hal.statusaccept
dc.identifier.eissn1361-6463


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