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dc.contributor.authorDEPLA, Diederik
dc.contributor.authorLAMAS, Jerika
dc.contributor.author
 hal.structure.identifier
BESNARD, Aurélien
127742 Laboratoire Bourguignon des Matériaux et Procédés [LABOMAP]
dc.date.accessioned2016
dc.date.available2016
dc.date.issued2016
dc.date.submitted2016
dc.identifier.issn0042-207X
dc.identifier.urihttp://hdl.handle.net/10985/10914
dc.description.abstractMixed oxide thin films, such as yttria-stabilized zirconia, deposited by dual reactive magnetron sputtering on a non-rotating substrate show a typical microstructure of bended, or tilted columns. Two effects define the tilt. The first effect is the compositional gradient over each column which results in a different lattice spacing. To accommodate this difference, the column bends. As such, the chemical composition has a major influence on the final columnar tilt. The second effect is ballistic shadowing which is controlled by the pressure-distance product. At higher pressure-distances, this second effect plays a more prominent role, and a different behaviour of the columnar tilt as a function of the film composition is noticed. The experimental trends can be understood by the use of a particle trajectory code which provides the angular and energy distribution of the atoms to a ballistic aggregation Monte Carlo code simulating the resulting microstructure.
dc.language.isoen
dc.publisherElsevier
dc.rightsPost-print
dc.subjectYttria-stabilized zirconia
dc.subjectDual magnetron sputtering
dc.subjectModelling
dc.subjectMonte Carlo
dc.titleThe influence of the pressure on the microstructure of yttria-stabilized zirconia thin films deposited by dual magnetron sputtering
ensam.embargo.terms2016-12-13
dc.typdocArticle dans une revue avec comité de lecture
dc.localisationCentre de Cluny
dc.subject.halPhysique: matière Condensée: Science des matériaux
dc.subject.halSciences de l'ingénieur: Micro et nanotechnologies/Microélectronique
ensam.audienceInternationale
ensam.page118-122
ensam.journalVacuum
ensam.volume125
ensam.peerReviewingOui
hal.identifierhal-01333434
hal.version1
hal.statusaccept


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