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dc.contributor.authorSIAD, Ahcene
dc.contributor.authorBESNARD, Aurélien
dc.contributor.author
 hal.structure.identifier
JACQUET, Philippe
233808 ECAM Lyon [ECAM Lyon]
dc.contributor.author
 hal.structure.identifier
NOUVEAU, Corinne
127742 Laboratoire Bourguignon des Matériaux et Procédés [LABOMAP]
dc.date.accessioned2016
dc.date.available2017
dc.date.issued2016
dc.date.submitted2016
dc.identifier.issn0042-207X
dc.identifier.urihttp://hdl.handle.net/10985/11155
dc.description.abstractThe objective of this study is to examine the sudden drop in properties of aluminum, titanium and chromium thin films prepared by the glancing angle deposition method. The thin films were deposited by DC magnetron sputtering under identical deposition conditions. A substrate-holder with seven different orientations with respect to the target normal was used. The thickness and the column tilt angles (β) of the thin films were determined by scanning electron microscopy. The residual stress of the thin films was evaluated using the wafer curvature technique and calculated by the Stoney's formula. The thickness variation and column tilt angle versus the orientation of the substrate indicated that the critical point is around 60° for all metallic materials and a critical angle of 60° is also found for the residual stress. Simulations of the particles transport are compared to the experimental data and moderate the critical angles analyses.
dc.description.sponsorshipFrnch Ministry of Higher Education and Research
dc.language.isoen
dc.publisherElsevier
dc.rightsPost-print
dc.subjectDC magnetron sputtering
dc.subjectGLAD
dc.subjectAl
dc.subjectTi
dc.subjectCr
dc.subjectSimulation
dc.titleCritical angles in DC magnetron glad thin films
ensam.embargo.terms2017-07-12
dc.identifier.doi10.1016/j.vacuum.2016.07.012
dc.typdocArticle dans une revue avec comité de lecture
dc.localisationCentre de Cluny
dc.subject.halPhysique: matière Condensée: Science des matériaux
dc.subject.halSciences de l'ingénieur: Matériaux
dc.subject.halSciences de l'ingénieur: Micro et nanotechnologies/Microélectronique
ensam.audienceInternationale
ensam.page305-311
ensam.journalVacuum
ensam.volume131
ensam.peerReviewingOui
hal.identifierhal-01365494
hal.version1
hal.statusaccept


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