Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C
dc.contributor.author
hal.structure.identifier | BATTAGLIA, Jean-Luc
|
dc.contributor.author
hal.structure.identifier | KUSIAK, Andrzej
|
dc.contributor.author
hal.structure.identifier | SCHICK, Vincent
|
dc.contributor.author
hal.structure.identifier | CAPPELLA, Andrea
|
dc.contributor.author | WIEMER, Claudia |
dc.contributor.author | LONGO, Massimo |
dc.contributor.author
hal.structure.identifier | VARESI, Enrico
|
dc.date.accessioned | 2012 |
dc.date.available | 2012 |
dc.date.issued | 2010 |
dc.identifier.citation | Journal of Applied Physics, vol. 107, n°4 |
dc.identifier.issn | 0021-8979 |
dc.identifier.uri | http://hdl.handle.net/10985/6454 |
dc.description.abstract | The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, was measured using a photothermal radiometry experiment. The two phase changes in the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the face centered cubic (fcc) crystalline state at 130 °C and then to the hexagonal crystalline phase (hcp) at 310 °C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones. |
dc.language.iso | en |
dc.publisher | American Institute of Physics |
dc.rights | Post-print |
dc.subject | amorphous state |
dc.subject | antimony compounds |
dc.subject | crystal structure |
dc.subject | crystallisation |
dc.subject | germanium compounds |
dc.subject | interface phenomena |
dc.subject | phase change materials |
dc.subject | silicon compounds |
dc.subject | solid-state phase transformations |
dc.subject | thermal conductivity |
dc.subject | thermal resistance |
dc.title | Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C |
dc.typdoc | Article dans une revue avec comité de lecture |
dc.localisation | Centre de Bordeaux-Talence |
dc.subject.hal | Physique |
dc.subject.hal | Sciences de l'ingénieur: Mécanique: Mécanique des matériaux |
dc.subject.hal | Physique: Mécanique: Génie mécanique |
hal.identifier | hal-00740147 |
hal.version | 1 |
hal.submission.permitted | updateFiles |
hal.status | accept |