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dc.contributor.author
 hal.structure.identifier
TEYSSEDRE, Hubert
40214 Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
dc.contributor.authorGILORMINI, Pierre
dc.contributor.author
 hal.structure.identifier
LANDIS, Stefan
40214 Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
dc.contributor.author
 hal.structure.identifier
REGNIER, Gilles
86289 Laboratoire Procédés et Ingénierie en Mécanique et Matériaux [PIMM]
dc.date.accessioned2013
dc.date.available2013
dc.date.issued2013
dc.date.submitted2013
dc.identifier.issn0167-9317
dc.identifier.urihttp://hdl.handle.net/10985/7175
dc.description.abstractNanoimprint lithography is an efficient way to reproduce nanostructures down to 20 nanometers in sub-micrometer polymeric films. To optimize this process, simulation using a Newtonian behavior is a cheap and efficient way to predict the polymer flow in micro and nano size cavities. This behavior is nevertheless limited to flows with shear rates below a critical value that can be determined with standard rheology measurements. We have investigated the validity domain of this behavior to simulate thermal NIL. This domain of validity is composed of two uncoupled functions, one for the material properties and the mean pressure applied to the pattern, and one for the geometry considered. The latter function has been determined with numerical simulations using the natural element method. It is demonstrated that knowing the mean applied pressure, the critical shear rate, and the viscosity of the material we are able to determine, depending on stamp geometry, if shear-thinning may or may not occur during an imprinting process.
dc.description.sponsorshipProjet ANR SINCRONE
dc.language.isoen_US
dc.publisherElsevier
dc.rightsPost-print
dc.subjectnanoimpression, rhéofluidification
dc.titleLegitimate domain of a Newtonian behavior for thermal nanoimprint lithography
dc.identifier.doi10.1016/j.mee.2013.03.169
dc.typdocArticle dans une revue avec comité de lecture
dc.localisationCentre de Paris
dc.subject.halSciences de l'ingénieur: Mécanique
dc.subject.halSciences de l'ingénieur: Micro et nanotechnologies/Microélectronique
ensam.audienceInternationale
ensam.page215-218
ensam.journalMicroelectronic Engineering
ensam.volume110
hal.description.errorThe supplied XML description does not validate the AOfr schema
hal.identifierhal-00842918
hal.version1
hal.submission.permittedupdateMetadata
hal.statusaccept
dc.identifier.eissn1873-5568


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