id,collection,dc.contributor.author,dc.date.accessioned,dc.date.available,dc.date.issued,dc.date.submitted,dc.description.abstract,dc.description.sponsorship,dc.identifier.doi,dc.identifier.eissn,dc.identifier.issn,dc.identifier.uri,dc.language.iso,dc.localisation,dc.publisher,dc.rights,dc.subject,dc.subject.hal,dc.title,dc.typdoc,ensam.audience,ensam.city,ensam.conference.date,ensam.conference.title,ensam.country,ensam.embargo.terms,ensam.issue,ensam.journal,ensam.page,ensam.title.proceeding,ensam.volume,hal.author.function,hal.identifier,hal.status,hal.version
"b36a40cd-8418-4c05-9859-3584069e6059","10985/177","DEZEST, Denis||THOMAS, Olivier||MATHIEU, Fabrice||MAZENQ, Laurent||SOYER, Caroline||COSTECALDE, Jean||REMIENS, Denis||DEÜ, Jean-François||NICU, Liviu","2015","2015","2015","2015","In this paper we report an unprecedented level of integration of self-actuated nanoelectromechanical system (NEMS) resonators based on a 150 nm thick lead zirconate titanate (PZT) thin film at the wafer-scale. A top-down approach combining ultraviolet (UV) lithography with other standard planar processing technologies allows us to achieve high-throughput manufacturing. Multilayer stack cantilevers with different geometries have been implemented with measured fundamental resonant frequencies in the megahertz range and Q-factor values ranging from ~130 in air up to ~900 in a vacuum at room temperature. A refined finite element model taking into account the exact configuration of the piezoelectric stack is proposed and demonstrates the importance of considering the dependence of the beam’s cross-section upon the axial coordinate. We extensively investigate both experimentally and theoretically the transduction efficiency of the implemented piezoelectric layer and report for the first time at this integration level a piezoelectric constant of d31 = 15 fm.V−1. Finally, we discuss the current limitations to achieve piezoelectric detection.","ANR/PNANO 2008, project NEMSPIEZO","10.1088/0960-1317/25/3/035002","1361-6439","0960-1317","http://hdl.handle.net/10985/9654","en","Centre de Lille","IOP Publishing","Post-print","NEMS||Large-scale integration||PZT","Physique: matière Condensée: Science des matériaux||Sciences de l'ingénieur: Mécanique||Sciences de l'ingénieur: Mécanique: Matériaux et structures en mécanique||Sciences de l'ingénieur: Mécanique: Mécanique des structures||Sciences de l'ingénieur: Mécanique: Vibrations||Sciences de l'ingénieur: Micro et nanotechnologies/Microélectronique","Wafer-scale fabrication of self-actuated piezoelectric nanoelectromechanical resonators based on lead zirconate titanate (PZT)","Article dans une revue avec comité de lecture","Internationale",,,,,,"3","Journal of Micromechanics and Microengineering","35002-35013",,"25","aut||aut||aut||aut||aut||aut||aut||aut||aut","hal-01169283","accept","1"
"aac0fafb-a811-4c6c-a152-3271b2791f0d","10985/177","DEZEST, Denis||MATHIEU, Fabrice||MAZENQ, Laurent||SOYER, Caroline||COSTECALDE, Jean||THOMAS, Olivier||REMIENS, Denis","2015","2016","2015","2015","In this work, we present an unprecedented level of integration of piezoelectric actuation means on arrays of functional nanoresonators at the wafer scale. We use 150-nm thin lead titanate zirconate (PZT) as piezoelectric material mainly because of its excellent actuation properties even when geometrically constrained at extreme scale. This work paves promising ways for NEMS to be used in configurations where transduction capabilities are integrated at the nanodevice level providing effective fabrication process flow at the wafer-scale.",,,,,"http://hdl.handle.net/10985/10206","en","Centre de Lille","IEEE","Post-print","NEMS||actuators||piezoelectric actuation||PZT","Sciences de l'ingénieur: Micro et nanotechnologies/Microélectronique","PZT Nanofilm-Based Wafer Scale Nanoresonators","Communication avec acte","Internationale","Denver","2015","IEEE Frequency Control Symposium","Etats-Unis","1 Year",,,"6p.","IFCS-EFTF 2015",,"aut||aut||aut||aut||aut||aut||aut",,"unsent",
