https://sam.ensam.eu:443 The DSpace digital repository system captures, stores, indexes, preserves, and distributes digital research material. Fri, 15 May 2026 02:28:04 GMT 2026-05-15T02:28:04Z http://hdl.handle.net/10985/11959 Investigations on the mechanical properties of the elementary thin films composing a CIGS solar cell using the nano indentation technique. ABIB, Hocine; IOST, Alain; RAHMOUN, Khadidja; VILCOT, Jean-Pierre; MONTAGNE, Alex The aim of this work is to assess the mechanical properties of the different layers composing a CIGS based solar cell. Fabrication uses the magnetron sputtering deposition technique (except for the CdS layer which was deposited using chemical bath deposition process). We performed several indentation tests on individual layers (Mo back contact layer, CIGS absorber layer, CdS and alternative ZnOS buffer layers, ZnO-AZO window layer) deposited on glass substrates. We mainly report the values of hardness (H) and Young's modulus (E) on each material, through indentation tests with continuous stiffness measurement (CSM) and using an analytical model. The Mo layer remains the hardest and most rigid with H = 8.7 GPa and E = 185 GPa, on the other hand the CIGS layer has a weaker behavior with H = 3 GPa and E = 58 GPa. One might attribute the similar mechanical properties of the ZnO and ZnOS layers to the similarity of their microstructures. Fri, 01 Jan 2016 00:00:00 GMT http://hdl.handle.net/10985/11959 2016-01-01T00:00:00Z ABIB, Hocine IOST, Alain RAHMOUN, Khadidja VILCOT, Jean-Pierre MONTAGNE, Alex The aim of this work is to assess the mechanical properties of the different layers composing a CIGS based solar cell. Fabrication uses the magnetron sputtering deposition technique (except for the CdS layer which was deposited using chemical bath deposition process). We performed several indentation tests on individual layers (Mo back contact layer, CIGS absorber layer, CdS and alternative ZnOS buffer layers, ZnO-AZO window layer) deposited on glass substrates. We mainly report the values of hardness (H) and Young's modulus (E) on each material, through indentation tests with continuous stiffness measurement (CSM) and using an analytical model. The Mo layer remains the hardest and most rigid with H = 8.7 GPa and E = 185 GPa, on the other hand the CIGS layer has a weaker behavior with H = 3 GPa and E = 58 GPa. One might attribute the similar mechanical properties of the ZnO and ZnOS layers to the similarity of their microstructures. http://hdl.handle.net/10985/11622 Etude par nanoindentation des proprietes mecaniques du multicouche constituant une cellule solaire a base de cigs ABIB, Hocine; IOST, Alain; RAHMOUN, Khadidja; AYACHI, Boubakeur; VILCOT, Jean-Pierre; MONTAGNE, Alex Le but de notre travail est d'évaluer les propriétés mécaniques des différentes couches constituant une cellule solaire à base de CIGS afin d'en appréhender, à terme, leur influence sur la durée de vie de la cellule. Nous rapportons principalement les valeurs de la dureté et le module de Young obtenues par des mesures de nanoindentation. Fri, 01 Jan 2016 00:00:00 GMT http://hdl.handle.net/10985/11622 2016-01-01T00:00:00Z ABIB, Hocine IOST, Alain RAHMOUN, Khadidja AYACHI, Boubakeur VILCOT, Jean-Pierre MONTAGNE, Alex Le but de notre travail est d'évaluer les propriétés mécaniques des différentes couches constituant une cellule solaire à base de CIGS afin d'en appréhender, à terme, leur influence sur la durée de vie de la cellule. Nous rapportons principalement les valeurs de la dureté et le module de Young obtenues par des mesures de nanoindentation. http://hdl.handle.net/10985/11603 Caracterisations mecaniques par procede de nanoindentation de couches de silicium poreux nanostructurees FAKIRI, Souheyla; IOST, Alain; RAHMOUN, Khadidja; ZIOUCHE, Katir; MONTAGNE, Alex Dans la technologie des semi-conducteurs, le silicium poreux (SiP) trouve un grand intérêt notamment pour ses propriétés thermiques ou même diélectriques qui jouent un rôle important notamment pour la fabrication de microsystèmes ou de micro-capteurs [1]. Le silicium méso poreux, qui nous intéresse, est obtenu par gravure électrochimique de silicium fortement dopé P++. La forme microstructurée obtenue a une porosité qui influe fortement sur les propriétés mécaniques de la couche SiP. Pour garantir de bonnes tenues mécaniques, une solution consiste à oxyder la couche de SiP. Fri, 01 Jan 2016 00:00:00 GMT http://hdl.handle.net/10985/11603 2016-01-01T00:00:00Z FAKIRI, Souheyla IOST, Alain RAHMOUN, Khadidja ZIOUCHE, Katir MONTAGNE, Alex Dans la technologie des semi-conducteurs, le silicium poreux (SiP) trouve un grand intérêt notamment pour ses propriétés thermiques ou même diélectriques qui jouent un rôle important notamment pour la fabrication de microsystèmes ou de micro-capteurs [1]. Le silicium méso poreux, qui nous intéresse, est obtenu par gravure électrochimique de silicium fortement dopé P++. La forme microstructurée obtenue a une porosité qui influe fortement sur les propriétés mécaniques de la couche SiP. Pour garantir de bonnes tenues mécaniques, une solution consiste à oxyder la couche de SiP. http://hdl.handle.net/10985/9696 A multilayer model for describing hardness variations of aged porous silicon low-dielectric-constant thin films RAHMOUN, Khadidja; IOST, Alain; KERYVIN, Vincent; GUILLEMOT, Gildas; CHABANE, Sari This paper reports on the micro-instrumented indentation of a porous silicon structure obtained by anodization of a highly p+-doped (100) silicon substrate aged over 1 week. The three-layer structure obtained consists of oxidized porous silicon (cap-layer), porous silicon (inner-layer) and silicon substrate. The hardness curve has the typical “U shape” of low-dielectric-constant films when the indentation depth rises: the early decrease in hardness, due to the soft inner layer, is followed by an increase, due to the hard substrate. A multilayer model is developed to account for hardness variation with respect to the applied load. This model considers the crumbling of the cap-layer and of the inner porous structure. As a result, it is shown that considering the minima in the U shape gives an over-estimated value when it comes to assessing the coating hardness. In our experiment, this minimum depends on both the hardness and the thickness of the oxidized cap layer, but not on the mechanical properties of the substrate, even for indentation depths slightly lower than the film's thickness. One of the authors (K.R.) wants to thank Pr. Lazhar Haji for her proposal of a research stay at Laboratoire d'Optronique, CNRS-UMR FOTON 6082, Université de Rennes 1, France. The authors also wish to thank Dr. M. Gendouz (Laboratoire d'Optronique, CNRS-UMR FOTON 6082, Université de Rennes 1), J. Le Lannic (CMEBA, Université de Rennes 1), Pr. C. Mathieu (CCML Université d'Artois, Faculté Jean Perrin de Lens, France), and V. Hague (ENSAM Lille, France) respectively for their help with sample preparation, HR SEM or SEM observations and assistance as regards English. Thu, 01 Jan 2009 00:00:00 GMT http://hdl.handle.net/10985/9696 2009-01-01T00:00:00Z RAHMOUN, Khadidja IOST, Alain KERYVIN, Vincent GUILLEMOT, Gildas CHABANE, Sari This paper reports on the micro-instrumented indentation of a porous silicon structure obtained by anodization of a highly p+-doped (100) silicon substrate aged over 1 week. The three-layer structure obtained consists of oxidized porous silicon (cap-layer), porous silicon (inner-layer) and silicon substrate. The hardness curve has the typical “U shape” of low-dielectric-constant films when the indentation depth rises: the early decrease in hardness, due to the soft inner layer, is followed by an increase, due to the hard substrate. A multilayer model is developed to account for hardness variation with respect to the applied load. This model considers the crumbling of the cap-layer and of the inner porous structure. As a result, it is shown that considering the minima in the U shape gives an over-estimated value when it comes to assessing the coating hardness. In our experiment, this minimum depends on both the hardness and the thickness of the oxidized cap layer, but not on the mechanical properties of the substrate, even for indentation depths slightly lower than the film's thickness. http://hdl.handle.net/10985/9703 Vickers Microhardness of Oxidized and Nonoxidized Porous Silicon RAHMOUN, Khadidja; IOST, Alain; KERYVIN, Vincent; GUILLEMOT, Gildas; SANGLEBOEUF, Jean-Christophe; GUENDOUZ, Mohamed; HAJI, Lazhar In this work we present our recent investigation on characterizing mechanical properties of porous silicon (PS) by using instrumented micro-indentation. Hardness and elastic modulus for oxidized and nonoxidized PS were measured. Experimental results revealed that hardness and elastic modulus are significantly lower than that of silicon substrate and decrease with increasing porosities. After oxidation an increase of the hardness and elastic modulus were observed. The task of stabilization of PS mechanical parameters can be solved with the help of oxidation. Thu, 01 Jan 2015 00:00:00 GMT http://hdl.handle.net/10985/9703 2015-01-01T00:00:00Z RAHMOUN, Khadidja IOST, Alain KERYVIN, Vincent GUILLEMOT, Gildas SANGLEBOEUF, Jean-Christophe GUENDOUZ, Mohamed HAJI, Lazhar In this work we present our recent investigation on characterizing mechanical properties of porous silicon (PS) by using instrumented micro-indentation. Hardness and elastic modulus for oxidized and nonoxidized PS were measured. Experimental results revealed that hardness and elastic modulus are significantly lower than that of silicon substrate and decrease with increasing porosities. After oxidation an increase of the hardness and elastic modulus were observed. The task of stabilization of PS mechanical parameters can be solved with the help of oxidation. http://hdl.handle.net/10985/11965 Investigations on the mechanical properties of the elementary thin films composing a CuIn1 − xGaxSe2 solar cell using the nanoindentation technique ABIB, Hocine; IOST, Alain; RAHMOUN, Khadidja; AYACHI, Boubakeur; VILCOT, Jean-Pierre; MONTAGNE, Alex In this investigation, the mechanical properties of the different layers composing a CuIn1 − xGaxSe2 (CIGS) based solar cell were studied. Magnetron sputtering technique was used for the deposition of these layers except for the cadmium sulphide (CdS) layer which was deposited using chemical bath deposition process. We performed several indentation tests on the individual layers, i.e. molybdenum (Mo) back contact layer, CIGS absorber layer, CdS and alternative zinc sulphide oxide (ZnOS) buffer layers, and zinc oxide (ZnO)-AZO (aluminium-doped zinc oxide) transparent window layer; all were deposited on glass substrates. We report the values of the hardness (H) and of the Young's modulus (E) for each material, using indentation tests and an analytical model. The Mo layer remained the hardest and the most rigid, with H = 8.7 GPa and E = 185 GPa, while the CIGS layer has shown poor mechanical properties with H=3GPa and E=58 GPa. On the other hand, the observed similarity in mechanical properties of the ZnO and ZnOS layers might be attributed to the similarity of their microstructures. Sun, 01 Jan 2017 00:00:00 GMT http://hdl.handle.net/10985/11965 2017-01-01T00:00:00Z ABIB, Hocine IOST, Alain RAHMOUN, Khadidja AYACHI, Boubakeur VILCOT, Jean-Pierre MONTAGNE, Alex In this investigation, the mechanical properties of the different layers composing a CuIn1 − xGaxSe2 (CIGS) based solar cell were studied. Magnetron sputtering technique was used for the deposition of these layers except for the cadmium sulphide (CdS) layer which was deposited using chemical bath deposition process. We performed several indentation tests on the individual layers, i.e. molybdenum (Mo) back contact layer, CIGS absorber layer, CdS and alternative zinc sulphide oxide (ZnOS) buffer layers, and zinc oxide (ZnO)-AZO (aluminium-doped zinc oxide) transparent window layer; all were deposited on glass substrates. We report the values of the hardness (H) and of the Young's modulus (E) for each material, using indentation tests and an analytical model. The Mo layer remained the hardest and the most rigid, with H = 8.7 GPa and E = 185 GPa, while the CIGS layer has shown poor mechanical properties with H=3GPa and E=58 GPa. On the other hand, the observed similarity in mechanical properties of the ZnO and ZnOS layers might be attributed to the similarity of their microstructures.