Growth, structural and electrical properties of polar ZnO thin films on MgO (100) substrates

Article dans une revue avec comité de lecture
Auteur
NISTOR, Magdalena G.
380269 National Institute for Lasers, Plasma, and Radiation Physics - INFLPR (ROMANIA)
MANDACHE, Nicolae Bogdan
380269 National Institute for Lasers, Plasma, and Radiation Physics - INFLPR (ROMANIA)
PERRIÉRE, Jacques
541968 Institut des Nanosciences de Paris [INSP]
HÉBERT, Christian
541968 Institut des Nanosciences de Paris [INSP]
GHERENDI, Florin V.
380269 National Institute for Lasers, Plasma, and Radiation Physics - INFLPR (ROMANIA)
SEILER, Wilfried
86289 Laboratoire Procédés et Ingénierie en Mécanique et Matériaux [PIMM]
469561 ENSAM-LIM

URI
http://hdl.handle.net/10985/17935
DOI
10.1016/j.tsf.2011.01.266
Date
2011
Journal
Thin Solid Films

Résumé

ZnO films have been grown on (100) oriented MgO substrates by pulsed-electron beam deposition in the room temperature to 500 °C range. Highly (00•2) textured films are obtained for a growth temperature higher than 200 °C, and epitaxial films are formed at 500 °C with the following epitaxial relationships: (1-1•0)ZnO // (110)MgO and (11•0)ZnO // (110)MgO, despite the difference in symmetry between film and substrate. The low temperature resistivity curves evidenced a metal-semiconductor transition for the ZnO films grown in the 300 to 500 °C range which has been interpreted in the frame of the model of conductivity in disordered oxides.

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