X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation
Article dans une revue avec comité de lecture
Auteur
OUADDAH, Hadjer
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
BECKER, Maike
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
RIBERI-BÉRIDOT, Thècle
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
TSOUTSOUVA, Maria
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
REGULA, Gabrielle
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
REINHART, Guillaume
198056 Aix Marseille Université [AMU]
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
198056 Aix Marseille Université [AMU]
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
PÉRICHAUD, Isabelle
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
199957 Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
RACK, Alexander
2568 European Synchrotron Radiation Facility [ESRF]
186406 High-resolution Diffraction Topography Beamline [ID19]
2568 European Synchrotron Radiation Facility [ESRF]
186406 High-resolution Diffraction Topography Beamline [ID19]
BOLLER, Elodie
2568 European Synchrotron Radiation Facility [ESRF]
186406 High-resolution Diffraction Topography Beamline [ID19]
2568 European Synchrotron Radiation Facility [ESRF]
186406 High-resolution Diffraction Topography Beamline [ID19]
BARUCHEL, José
2568 European Synchrotron Radiation Facility [ESRF]
186406 High-resolution Diffraction Topography Beamline [ID19]
2568 European Synchrotron Radiation Facility [ESRF]
186406 High-resolution Diffraction Topography Beamline [ID19]
Résumé
To control the final grain structure and the density of structural crystalline defects in silicon (Si) ingots is still a main issue for Si used in photovoltaic solar cells. It concerns both innovative and conventional fabrication processes. Due to the dynamic essence of the phenomena and to the coupling of mechanisms at different scales, the post-mortem study of the solidified ingots gives limited results. In the past years, we developed an original system named GaTSBI for Growth at high Temperature observed by Synchrotron Beam Imaging, to investigate in situ the mechanisms involved during solidification. X-ray radiography and X-ray Bragg diffraction imaging (topography) are combined and implemented together with the running of a high temperature (up to 2073 K) solidification furnace. The experiments are conducted at the European Synchrotron Radiation Facility (ESRF). Both imaging techniques provide in situ and real time information during growth on the morphology and kinetics of the solid/liquid (S/L) interface, as well as on the deformation of the crystal structure and on the dynamics of structural defects including dislocations. Essential features of twinning, grain nucleation, competition, strain building, and dislocations during Si solidification are characterized and allow a deeper understanding of the fundamental mechanisms of its growth.
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Article dans une revue avec comité de lectureBECKER, Maike; PIHAN, Etienne; GUITTONNEAU, Fabrice; REGULA, Gabrielle; OUADDAH, Hadjer; REINHART, Guillaume; MANGELINCK-NOËL, Nathalie; BARRALLIER, Laurent (2020)Directional solidification of a cast mono silicon seed and of a float-zone (FZ) silicon seed was performed and the grain and defect structures of the seeds as well as of the regrown parts are analyzed. In situ X-ray ...
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Article dans une revue avec comité de lectureRIBERI-BÉRIDOT, Thècle; MANGELINCK-NOËL, Nathalie; TANDJAOUI, Amina; REINHART, Guillaume; BILLIA, Bernard; LAFFORD, Tamzin; BARUCHEL, José; BARRALLIER, Laurent (Elsevier, 2015)Grain orientation and competition during growth has been analyzed in directionally solidified multi-crystalline silicon samples. In situ and real-time characterization of the evolution of the grain structure during growth ...
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Article dans une revue avec comité de lectureRIBERI – BÉRIDOT, T.; TSOUTSOUVA, M.G.; REGULA, G.; REINHART, G.; GUITTONNEAU, Fabrice; MANGELINCK-NOËL, N.; BARRALLIER, Laurent (Elsevier, 2019)This work is dedicated to the grain structure formation in silicon ingots with a particular focus on the crystal structure strain building and its implication in new grain nucleation process. The implied mechanisms are ...
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Article dans une revue avec comité de lectureTSOUTSOUVA, M.G.; RIBERI – BÉRIDOT, T.; REGULA, G.; REINHART, G.; BARUCHEL, J.; GUITTONNEAU, Fabrice; MANGELINCK-NOËL, N.; BARRALLIER, Laurent (Elsevier, 2016)This work is dedicated to the advanced in situ X-ray imaging and complementary ex situ investigations of the growth mechanisms when silicon solidifies on a monocrystalline seed oriented ⟨110⟩ in the solidification direction. ...
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Article dans une revue avec comité de lectureGOULMY, Jean-Patrick; GUITTONNEAU, Fabrice; JÉGOU, Sébastien; BARRALLIER, Laurent (Wiley, 2023-07-13)Performing in situ scanning electron microscope (SEM) tests is an interesting way to visualise strain heterogeneities under mechanical loading. An essential step before performing the tests is to define the acquisition ...