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Nanocolumnar TiN thin film growth by oblique angle sputter-deposition: Experiments vs. simulations

Article dans une revue avec comité de lecture
Author
BOUAOUINA, Boudjemaa
230815 Unité de Recherche Matériaux, Procédés et Environement - URMPE (Boumerdès, Algérie)
MASTAIL, Cédric
118112 Institut Pprime [UPR 3346] [PPrime [Poitiers]]
BESNARD, Aurélien
127742 Laboratoire Bourguignon des Matériaux et Procédés [LABOMAP]
MAREUS, Rubenson
118112 Institut Pprime [UPR 3346] [PPrime [Poitiers]]
NITA, Florin
118112 Institut Pprime [UPR 3346] [PPrime [Poitiers]]
MICHEL, Anny
118112 Institut Pprime [UPR 3346] [PPrime [Poitiers]]
ABADIAS, Grégory
118112 Institut Pprime [UPR 3346] [PPrime [Poitiers]]

URI
http://hdl.handle.net/10985/14017
DOI
10.1016/j.matdes.2018.09.023
Date
2018
Journal
Materials and Design

Abstract

Nanostructured columnar titanium nitride (TiN) thin films were produced by oblique angle deposition using reactive magnetron sputtering. The influence of the angular distribution of the incoming particle flux on the resulting filmmorphology (columntilt angle, porosity, surface roughness) was studied by varying the inclination angle α of the substrate at two different working pressures, 0.3 and 0.5 Pa. The microstructural features and columns tilt angles βexp determined experimentally were compared to those simulated from two kinetic Monte Carlo (KMC) models. With increasing pressure, the TiN columns were found to be less defined but no significant changes in βexp were revealed. Both KMC models satisfactorily reproduced the experimental findings, the agreement being closer at 0.5 Pa. The evolution of β angle is also discussed with respect to the resulting incidence angle θres of the incoming flux, this latter quantity accounting for the local incidence angle of individual particles,which may greatly differ fromthe geometrical angle α, especially at highworking pressure due to the incoming particle – gas collisions. Crossover phenomena between the 0.3 and 0.5 Pa series were revealed from the evolution of the film resistivity, as well as simulated layer density and surface roughness versus α angle.

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