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Thermoreflectance temperature measurement with millimeter wave

Article dans une revue avec comité de lecture
Author
PRADERE, Christophe
164351 Institut de Mécanique et d'Ingénierie de Bordeaux [I2M]
CAUMES, Jean-Pascal
164351 Institut de Mécanique et d'Ingénierie de Bordeaux [I2M]
BENKHEMIS, S.
164351 Institut de Mécanique et d'Ingénierie de Bordeaux [I2M]
PERNOT, Jean-Philippe
136813 Laboratoire Ondes et Matière d'Aquitaine [LOMA]
PALOMO, Elena
164351 Institut de Mécanique et d'Ingénierie de Bordeaux [I2M]
DILHAIRE, S.
136813 Laboratoire Ondes et Matière d'Aquitaine [LOMA]
BATSALE, Jean-Christophe
164351 Institut de Mécanique et d'Ingénierie de Bordeaux [I2M]

URI
http://hdl.handle.net/10985/15996
DOI
10.1063/1.4884639
Date
2014
Journal
Review of Scientific Instruments

Abstract

GigaHertz (GHz) thermoreflectance technique is developed to measure the transient temperature of metal and semiconductor materials located behind an opaque surface. The principle is based on the synchronous detection, using a commercial THz pyrometer, of a modulated millimeter wave (at 110 GHz) reflected by the sample hidden behind a shield layer. Measurements were performed on aluminum, copper, and silicon bulks hidden by a 5 cm thick Teflon plate. We report the first measurement of the thermoreflectance coefficient which exhibits a value 100 times higher at 2.8 mm radiation than those measured at visible wavelengths for both metallic and semiconductor materials. This giant thermoreflectance coefficient κ, close to 10(-3) K(-1) versus 10(-5) K(-1) for the visible domain, is very promising for future thermoreflectance applications.

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