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dc.contributor.author
 hal.structure.identifier
MARTIN, Nicolas
866 Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) [FEMTO-ST]
dc.contributor.authorBESNARD, Aurélien
dc.contributor.author
 hal.structure.identifier
STAHL, Fabrice
866 Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) [FEMTO-ST]
dc.contributor.authorVAZ, Filipe
dc.contributor.author
 hal.structure.identifier
NOUVEAU, Corinne
127742 Laboratoire Bourguignon des Matériaux et Procédés [LaBoMaP]
dc.date.accessioned2014
dc.date.available2014
dc.date.issued2008
dc.date.submitted2013
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10985/8014
dc.description.abstractTitanium oxide thin films were prepared by reactive magnetron sputtering. The reactive gas pulsing process was implemented to control the oxygen injection in the deposition process and,consequently, to tune the oxygen concentration in the films from pure titanium to stoichiometric TiO2, maintaining a homogeneous in-depth concentration. The electrical conductivity of the films was investigated as a function of the oxygen injection time, the metalloid concentration and temperature, in the range 90–600 K. The curved Arrhenius plots of the conductivity were examined taking into account the grain boundary limited transport model of Werner J. H. Werner Solid State Phenom. 37–38, 213 1994 . The grain barrier heights were found to depend significantly on the oxygen supplied into the deposition process and thus, on the oxygen-to-titanium atomic ratio in the films. The analysis as a function of temperature showed that the conduction mechanism in the coatings was not solely limited by the oxygen-to-titanium atomic ratio, but also by the grain boundary scattering.
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.rightsPost-print
dc.subjectreactive magnetron sputtering
dc.subjectTiO2
dc.subjectelectrical conductivity
dc.subjectoxygen injection time, metalloid concentration and temperature variation
dc.subjectgrain barrier
dc.titleThe contribution of grain boundary barriers to the electrical conductivity of titanium oxide thin films
dc.identifier.doi10.1063/1.2970034
dc.typdocArticles dans des revues avec comité de lecture
dc.localisationCentre de Cluny
dc.subject.halChimie: Matériaux
dc.subject.halPhysique: matière Condensée: Supraconductivité
dc.subject.halSciences de l'ingénieur: Matériaux
dc.subject.halSciences de l'ingénieur: Plasmas
ensam.audienceNon spécifiée
ensam.page064102-3
ensam.journalApplied Pysics Letters
ensam.volume93
ensam.issue6
hal.identifierhal-00981143
hal.version1


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