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Influence of the window thermal diffusivity on the silicon wafer temperature in a rapid thermal system

Article dans une revue avec comité de lecture
Author
LOGERAIS, Pierre-Olivier
25533 Centre d'Etudes et Recherches en Thermique, Environnement et Systèmes [Créteil] [CERTES EA 3481]
KHELALFA, Raouf
25533 Centre d'Etudes et Recherches en Thermique, Environnement et Systèmes [Créteil] [CERTES EA 3481]
RIOU, Olivier
25533 Centre d'Etudes et Recherches en Thermique, Environnement et Systèmes [Créteil] [CERTES EA 3481]
DURASTANTI, Jean-Félix
25533 Centre d'Etudes et Recherches en Thermique, Environnement et Systèmes [Créteil] [CERTES EA 3481]
BOUTEVILLE, Anne
211916 Laboratoire Angevin de Mécanique, Procédés et InnovAtion [LAMPA]

URI
http://hdl.handle.net/10985/10252
DOI
10.1080/01457632.2015.987588
Date
2015
Journal
Heat Transfer Engineering

Abstract

The heating of a silicon wafer in a rapid thermal process is studied by numerical simulation. In the model, the equations of conservation of mass and energy are solved with the finite volume method and the determination of the solutions of the radiative transfer equation is based on the Monte-Carlo method. The results of numerical simulations, without optimization and in steady-state, show a close relationship between the thermal profiles of the silicon wafer and the ones of the quartz window. By introducing a high thermal diffusivity value for the window, the homogeneity of the wafer temperature is improved by 54%. The effect of heat storage by the quartz window on the temperature profile of the silicon substrate is hence well appreciated. Finally, a selection of materials is proposed for the implementation of the high diffusivity infrared window.

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