Zn1-xMgxO thin films deposited by original Infrared assisted Spray Chemical Vapor Deposition: evaluation of structural, optical and electrical properties with the aim of provide Cu(In,Ga)Se2 based photovoltaic devices
Article dans une revue avec comité de lecture
In this work, magnesium doped zinc oxide (Zn1-xMgxO) thin films were deposited using an original infrared assisted Spray Chemical Vapor Deposition (Spray-CVD) technique on borosilicate glass substrates. With a simple, safe and cost-effective apparatus, Zn1-xMgxO thin films was studied in a range of 0 to 40% in precursor mass ratio r = [Mg]/([Zn]+[Mg]). The optimal deposition temperature was 500°C. X-ray diffraction analysis confirmed the presence of magnesium in the hexagonal Wurtzite crystal lattice of zinc oxide for r values lower than 30%. The optical properties have been investigated by spectrophotometry and showed that the transparency is higher than 80% in the visible and infrared spectral domain for r values lower than 20%. The band gap energy increased from 3.28 to 3.94 eV (0 < r < 40%), and the resistivity of the samples increased from 4.16.10-2 to 7.09.10+3 Ω.cm (Hall effect measurement). Additional characterizations have been realized by X-ray fluorescence (XRF) and energy dispersive X-ray spectrometry (EDX). All results demonstrate that Zn1-xMgxO thin films with r = 20% obtained by our Spray-CVD method is an interesting candidate for buffer layer application in Cu(In,Ga)Se2 based solar cells.
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