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Correlation between mechanical and microstructural properties of molybdenum nitride thin films deposited on silicon by reactive RF magnetron discharge

Article dans une revue avec comité de lecture
Author
BOUAOUINA, Boudjemaa
230815 Unité de Recherche Matériaux, Procédés et Environement - URMPE (Boumerdès, Algérie)
BESNARD, Aurélien
127742 Laboratoire Bourguignon des Matériaux et Procédés [LABOMAP]
ABAIDIA, Seddik El Hak
230815 Unité de Recherche Matériaux, Procédés et Environement - URMPE (Boumerdès, Algérie)
AIROUDJ, Aissam
505910 Institut de Science des Matériaux de Mulhouse [IS2M]
BENSOUICI, Fayçal
230815 Unité de Recherche Matériaux, Procédés et Environement - URMPE (Boumerdès, Algérie)

URI
http://hdl.handle.net/10985/12774
DOI
10.1016/j.surfcoat.2017.10.028
Date
2018
Journal
Surface and Coatings Technology

Abstract

Molybdenum nitride thin films were deposited on (100) silicon substrates by R.F. magnetron sputtering of a Mo target in a (Ar-N2) gas mixtures. The films were studied by Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and X-ray diffraction. The nanomechanical properties have been determined by nanoindentation and Peak-Force Quantitative Nanomechanical Mapping (PF-QNM). The total internal stresses were determined by curvature measurements and the Stoney formula. As thin film composition influences the morphology, the stress state and the mechanical properties, modifications are expected in this study where the nitrogen content is tuned. The film exhibits a polycrystalline structure with preferred orientation along (111) plane. The increase of the nitrogen content in the coating (N/Mo =1.1) induces a broadening of the full width at half maximum (FWHM) of the (111) diffraction peak, which is attributed to the presence of smaller crystallites. The residual stress and mechanical properties variation were correlated to the structural transition from γ-Mo2N to hexagonal and cubic MoN. The results show a good agreement between the nanomechanical properties obtained by nanoindentation and PF-QNM.

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