Transparent conductive Nd-doped ZnO thin films
TypeArticles dans des revues avec comité de lecture
Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display the wurtzite phase. Different epitaxial relationships between films and substrate as a function of growth pressure and substrate temperature were evidenced by asymmetric x-ray diffraction measurements. By varying PLD growth conditions, the films can be tuned to have either metallic or semiconductor characteristics, with good optical transmittance in the visible range. Moreover, a low-temperature metal-insulator transition may be observed in Nd-doped ZnO films grown under low oxygen pressure. Resistivities as low as 6 × 10−4 Ω cm and 90% optical transmittance in the visible range and different near-infrared transmittance are obtained with approximately 1.0–1.5 at.% Nd doping and growth temperature of approximately 500 °C.
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On the relevance of large scale pulsed-laser deposition: Evidence of structural heterogeneities in ZnO thin films PERRIÈRE, J; HEBERT, C; JEDRECY, N.; SEILER, Wilfrid; ZANELLATO, Olivier; PORTIER, X; PEREZ-CASERO, R; MILLON, E; NISTOR, M (AIP Publishing, 2014)Pulsed-laser deposition is known as a well-suited method for growing thin films of oxide compounds presenting a wide range of functional properties. A limitation of this method for industrial process is the very anisotropic ...
NISTOR, M; SEILER, Wilfrid; HEBERT, C; MATEI, E; PERRIÈRE, J (ELSEVIER, 2014)Indium oxide thin films were grown by pulsed electron beam deposition method at 500 °C on c-cut sapphire and (0 0 1) oriented LaAlO3 single crystal substrates in oxygen or argon gas. The effects of ambient gas and substrate ...
UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application LE BOULBAR, E; MILLON, E; NTSOENZOK, E; HAKIM, B; SEILER, Wilfrid; BOULMER-LEBORGNE, C; PERRIÈRE, J (ELSEVIER, 2012)Undoped and Nd-doped titanium dioxide anatase and rutile films have been grown by pulsed-laser deposition at 700 °C under 0.1 mbar O2. By selecting adequate substrates, TiO2 films doped with 1, 2 or 5 at.% Nd were grown ...
SEILER, Wilfrid; NISTOR, M; PERRIÈRE, J; HEBER, C (Elsevier, 2013)Indium oxide thin ﬁlms were grown by the pulsed electron beam deposition method on c-cut sapphire substrates at 10−2 mbar oxygen pressure and temperature up to 500 1C. Such conditions lead to the formation of dense, smooth ...
SEILER, Wilfrid; SELMANE, M; ABDELOUHADI, K; PERRIÈRE, J (Elsevier, 2015)The nature of the crystalline phase present in gallium oxide films grown by pulsed-laser deposition on c-cut sapphire substrate has been studied. Amorphous, polycrystalline or epitaxial gallium oxide films can be obtained ...