Epitaxial undoped indium oxide thin films: Structural and physical properties.
Article dans une revue avec comité de lecture
Indium oxide thin ﬁlms were grown by the pulsed electron beam deposition method on c-cut sapphire substrates at 10−2 mbar oxygen pressure and temperature up to 500 1C. Such conditions lead to the formation of dense, smooth and stoichiometric In2O3 ﬁlms, with the cubic bixbyite structure. Epitaxial thin ﬁlms were obtained at substrate temperatures as low as 200 1C. Pole ﬁgure measurements indicate the existence of (111) oriented In2O3 crystallites with different in-plane symmetry, i.e. three-fold and six-fold symmetry. The origin of this effect may be related to the speciﬁcities of the growth method which can induce a large disorder in the oxygen network of In2O3, leading then to a six-fold symmetry in the (111) plane of the bixbyite structure. This temperature resistivity behaviour shows metallic conductivity at room temperature and a metal– semiconductor transition at low temperature for In2O3 ﬁlms grown at 200 1C, while the classical semiconductor behaviour was observed for the ﬁlms grown at 400 and 500 1C. A maximum mobility of 24.7 cm2/V s was measured at 200 1C, and then it falls off with improving the crystalline quality of ﬁlms. The optical transparency is high (480%) in a spectral range from 500 nm to 900 nm.
Showing items related by title, author, creator and subject.
Article dans une revue avec comité de lectureNISTOR, M; MILLON, E; CACHONCINLLE, C; SEILER, Wilfrid; JEDRECY, N.; HEBERT, C; PERRIERE, J. (IOP Publishing, 2015)Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of ...
Article dans une revue avec comité de lectureNISTOR, M; SEILER, Wilfrid; HEBERT, C; MATEI, E; PERRIÈRE, J (Elsevier, 2014)Indium oxide thin films were grown by pulsed electron beam deposition method at 500 °C on c-cut sapphire and (0 0 1) oriented LaAlO3 single crystal substrates in oxygen or argon gas. The effects of ambient gas and substrate ...
On the relevance of large scale pulsed-laser deposition: Evidence of structural heterogeneities in ZnO thin films Article dans une revue avec comité de lecturePERRIÈRE, J; HEBERT, C; JEDRECY, N.; SEILER, Wilfrid; ZANELLATO, Olivier; PORTIER, X; PEREZ-CASERO, R; MILLON, E; NISTOR, M (American Institute of Physics, 2014)Pulsed-laser deposition is known as a well-suited method for growing thin films of oxide compounds presenting a wide range of functional properties. A limitation of this method for industrial process is the very anisotropic ...
Article dans une revue avec comité de lecturePERRIÉRE, Jacques; HÉBERT, Christian; PETITMANGIN, Aline; PORTIER, Xavier; SEILER, Wilfried; NISTOR, Magdalena G. (American Institute of Physics, 2011)The composition, structure, microstructure, and properties of indium tin oxide films grown by pulsed laser deposition at room temperature and under vacuum were studied. The films are highly nonstoichiometric, with about ...
Article dans une revue avec comité de lectureTRICOT, Sylvain; NISTOR, Magdalena; MILLON, Éric; BOULMER-LEBORGNE, Chantal; MANDACHE, Nicolae Bogdan; PERRIÉRE, Jacques; SEILER, Wilfried (Elsevier, 2010)In this work, the pulsed electron beam deposition method (PED) is evaluated by studying the properties of ZnO thin films grown on c-cut sapphire substrates. The film composition, structure and surface morphology were ...