Growth, structural and electrical properties of polar ZnO thin films on MgO (100) substrates
Article dans une revue avec comité de lecture
Author
NISTOR, Magdalena G.
380269 National Institute for Lasers, Plasma, and Radiation Physics - INFLPR (ROMANIA)
380269 National Institute for Lasers, Plasma, and Radiation Physics - INFLPR (ROMANIA)
MANDACHE, Nicolae Bogdan
380269 National Institute for Lasers, Plasma, and Radiation Physics - INFLPR (ROMANIA)
380269 National Institute for Lasers, Plasma, and Radiation Physics - INFLPR (ROMANIA)
Date
2011Journal
Thin Solid FilmsAbstract
ZnO films have been grown on (100) oriented MgO substrates by pulsed-electron beam deposition in the room temperature to 500 °C range. Highly (00•2) textured films are obtained for a growth temperature higher than 200 °C, and epitaxial films are formed at 500 °C with the following epitaxial relationships: (1-1•0)ZnO // (110)MgO and (11•0)ZnO // (110)MgO, despite the difference in symmetry between film and substrate. The low temperature resistivity curves evidenced a metal-semiconductor transition for the ZnO films grown in the 300 to 500 °C range which has been interpreted in the frame of the model of conductivity in disordered oxides.
Files in this item
Related items
Showing items related by title, author, creator and subject.
-
Article dans une revue avec comité de lecturePERRIÉRE, Jacques; HÉBERT, Christian; PETITMANGIN, Aline; PORTIER, Xavier; SEILER, Wilfried; NISTOR, Magdalena G. (American Institute of Physics, 2011)The composition, structure, microstructure, and properties of indium tin oxide films grown by pulsed laser deposition at room temperature and under vacuum were studied. The films are highly nonstoichiometric, with about ...
-
Article dans une revue avec comité de lectureTRICOT, Sylvain; NISTOR, Magdalena; MILLON, Éric; BOULMER-LEBORGNE, Chantal; MANDACHE, Nicolae Bogdan; PERRIÉRE, Jacques; SEILER, Wilfried (Elsevier, 2010)In this work, the pulsed electron beam deposition method (PED) is evaluated by studying the properties of ZnO thin films grown on c-cut sapphire substrates. The film composition, structure and surface morphology were ...
-
Article dans une revue avec comité de lectureNISTOR, M; SEILER, Wilfrid; HEBERT, C; MATEI, E; PERRIÈRE, J (Elsevier, 2014)Indium oxide thin films were grown by pulsed electron beam deposition method at 500 °C on c-cut sapphire and (0 0 1) oriented LaAlO3 single crystal substrates in oxygen or argon gas. The effects of ambient gas and substrate ...
-
Article dans une revue avec comité de lecturePERRIÈRE, J; HEBERT, C; JEDRECY, N.; SEILER, Wilfrid; ZANELLATO, Olivier; PORTIER, X; PEREZ-CASERO, R; MILLON, E; NISTOR, M (American Institute of Physics, 2014)Pulsed-laser deposition is known as a well-suited method for growing thin films of oxide compounds presenting a wide range of functional properties. A limitation of this method for industrial process is the very anisotropic ...
-
Article dans une revue avec comité de lectureNISTOR, M; MILLON, E; CACHONCINLLE, C; SEILER, Wilfrid; JEDRECY, N.; HEBERT, C; PERRIERE, J. (IOP Publishing, 2015)Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of ...