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On the relevance of large scale pulsed-laser deposition: Evidence of structural heterogeneities in ZnO thin films

Article dans une revue avec comité de lecture
Author
PERRIÈRE, J
101592 Institut des Nanosciences de Paris [INSP]
HEBERT, C
101592 Institut des Nanosciences de Paris [INSP]
JEDRECY, N.
101592 Institut des Nanosciences de Paris [INSP]
SEILER, Wilfrid
86289 Laboratoire Procédés et Ingénierie en Mécanique et Matériaux [PIMM]
ZANELLATO, Olivier
86289 Laboratoire Procédés et Ingénierie en Mécanique et Matériaux [PIMM]
PORTIER, X
56527 Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
PEREZ-CASERO, R
MILLON, E
955 Groupe de recherches sur l'énergétique des milieux ionisés [GREMI]
NISTOR, M
258603 National Institute for Lasers, Plasmas and Radiation Physics

URI
http://hdl.handle.net/10985/8855
DOI
10.1063/1.4896379
Date
2014
Journal
Journal of Applied Physics

Abstract

Pulsed-laser deposition is known as a well-suited method for growing thin films of oxide compounds presenting a wide range of functional properties. A limitation of this method for industrial process is the very anisotropic expansion dynamics of the plasma plume, which induces difficulties to grow on large scale films with homogeneous thickness and composition. The specific aspect of the crystalline or orientation uniformity has not been investigated, despite its important role on oxide films properties. In this work, the crystalline parameters and the texture of zinc oxide films are studied as a function of position with respect to the central axis of the plasma plume. We demonstrate the existence of large non-uniformities in the films. The stoichiometry, the lattice parameter, and the distribution of crystallites orientations drastically depend on the position with respect to the plume axis, i.e., on the oblique incidence of the ablated species. The origin of these non-uniformities, in particular, the unexpected tilted orientation of the ZnO c-axis may be attributed to the combined effects of the oblique incidence and of the ratio between oxygen and zinc fluxes reaching the surface of the growing film.

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