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Epitaxial ZnO thin films grown by pulsed electron beam deposition

Article dans une revue avec comité de lecture
Author
TRICOT, Sylvain
199965 Groupe de recherches sur l'énergétique des milieux ionisés [GREMI]
NISTOR, Magdalena
380269 National Institute for Lasers, Plasma, and Radiation Physics - INFLPR (ROMANIA)
MILLON, Éric
199965 Groupe de recherches sur l'énergétique des milieux ionisés [GREMI]
BOULMER-LEBORGNE, Chantal
199965 Groupe de recherches sur l'énergétique des milieux ionisés [GREMI]
MANDACHE, Nicolae Bogdan
380269 National Institute for Lasers, Plasma, and Radiation Physics - INFLPR (ROMANIA)
PERRIÉRE, Jacques
541968 Institut des Nanosciences de Paris [INSP]
SEILER, Wilfried
86289 Laboratoire Procédés et Ingénierie en Mécanique et Matériaux [PIMM]

URI
http://hdl.handle.net/10985/15977
Date
2010
Journal
Surface Science

Abstract

In this work, the pulsed electron beam deposition method (PED) is evaluated by studying the properties of ZnO thin films grown on c-cut sapphire substrates. The film composition, structure and surface morphology were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction and atomic force microscopy. Optical absorption, resistivity and Hall effect measurements were performed in order to obtain the optical and electronic properties of the ZnO films. By a fine tuning of the deposition conditions, smooth, dense, stoichiometric and textured hexagonal ZnO films were epitaxially grown on (0001) sapphire at 700 °C with a 30° rotation of the ZnO basal plane with respect to the sapphire substrate. The average transmittance of the films reaches 90% in the visible range with an optical band gap of 3.28 eV. Electrical characterization reveals a high density of charge carrier of 3.4 × 10 19 cm -3 along with a mobility of 11.53 cm2/Vs. The electrical and optical properties are discussed and compared to ZnO thin films prepared by the similar and most well-known pulsed laser deposition method.

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