Transparent conductive Nd-doped ZnO thin films
dc.contributor.author
hal.structure.identifier | NISTOR, M
|
dc.contributor.author
hal.structure.identifier | MILLON, E
|
dc.contributor.author
hal.structure.identifier | CACHONCINLLE, C
|
dc.contributor.author
hal.structure.identifier | SEILER, Wilfrid
|
dc.contributor.author
hal.structure.identifier | JEDRECY, N.
|
dc.contributor.author
hal.structure.identifier | HEBERT, C
|
dc.contributor.author | PERRIERE, J. |
dc.date.accessioned | 2015 |
dc.date.available | 2016 |
dc.date.issued | 2015 |
dc.date.submitted | 2015 |
dc.identifier.issn | 0022-3727 |
dc.identifier.uri | http://hdl.handle.net/10985/10360 |
dc.description.abstract | Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display the wurtzite phase. Different epitaxial relationships between films and substrate as a function of growth pressure and substrate temperature were evidenced by asymmetric x-ray diffraction measurements. By varying PLD growth conditions, the films can be tuned to have either metallic or semiconductor characteristics, with good optical transmittance in the visible range. Moreover, a low-temperature metal-insulator transition may be observed in Nd-doped ZnO films grown under low oxygen pressure. Resistivities as low as 6 × 10−4 Ω cm and 90% optical transmittance in the visible range and different near-infrared transmittance are obtained with approximately 1.0–1.5 at.% Nd doping and growth temperature of approximately 500 °C. |
dc.language.iso | en |
dc.publisher | IOP Publishing |
dc.rights | Post-print |
dc.subject | zinc oxide |
dc.subject | pulsed laser deposition |
dc.subject | thin films |
dc.subject | optical properties |
dc.subject | optical properties |
dc.subject | metal-insulator transition |
dc.title | Transparent conductive Nd-doped ZnO thin films |
ensam.embargo.terms | 3 Months |
dc.identifier.doi | 10.1088/0022-3727/48/19/195103 |
dc.typdoc | Article dans une revue avec comité de lecture |
dc.localisation | Centre de Paris |
dc.subject.hal | Sciences de l'ingénieur: Matériaux |
dc.subject.hal | Sciences de l'ingénieur: Mécanique |
ensam.audience | Internationale |
ensam.page | 195103 (9pp) |
ensam.journal | Journal of Physics D: Applied Physics |
ensam.volume | 48 |
hal.identifier | hal-01218114 |
hal.version | 1 |
hal.submission.permitted | updateMetadata |
hal.status | accept |
dc.identifier.eissn | 1361-6463 |