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Wafer-scale fabrication of self-actuated piezoelectric nanoelectromechanical resonators based on lead zirconate titanate (PZT)

Article dans une revue avec comité de lecture
Author
DEZEST, D
459 Laboratoire d'analyse et d'architecture des systèmes [LAAS]
ccTHOMAS, Olivier
543315 Laboratoire d’Ingénierie des Systèmes Physiques et Numériques [LISPEN]
MATHIEU, F
459 Laboratoire d'analyse et d'architecture des systèmes [LAAS]
MAZENQ, L
459 Laboratoire d'analyse et d'architecture des systèmes [LAAS]
SOYER, C
1296 Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
COSTECALDE, J
1296 Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
REMIENS, D
1296 Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
DEÜ, J F
12568 Laboratoire de Mécanique des Structures et des Systèmes Couplés [LMSSC]
NICU, L
459 Laboratoire d'analyse et d'architecture des systèmes [LAAS]

URI
http://hdl.handle.net/10985/15355
DOI
10.1088/0960-1317/25/3/035002
Date
2015
Journal
Journal of Micromechanics and Microengineering

Abstract

In this paper we report an unprecedented level of integration of self-actuated nanoelectromechanical system (NEMS) resonators based on a 150 nm thick lead zirconate titanate (PZT) thin film at the wafer-scale. A top-down approach combining ultraviolet (UV) lithography with other standard planar processing technologies allows us to achieve high-throughput manufacturing. Multilayer stack cantilevers with different geometries have been implemented with measured fundamental resonant frequencies in the megahertz range and Q-factor values ranging from ~130 in air up to ~900 in a vacuum at room temperature. A refined finite element model taking into account the exact configuration of the piezoelectric stack is proposed and demonstrates the importance of considering the dependence of the beam’s cross-section upon the axial coordinate. We extensively investigate both experimentally and theoretically the transduction efficiency of the implemented piezoelectric layer and report for the first time at this integration level a piezoelectric constant of d31 = 15 fm V−1. Finally, we discuss the current limitations to achieve piezoelectric detection.

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