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Epitaxial growth of gallium oxide films on c-cut sapphire substrate

Article dans une revue avec comité de lecture
Author
SEILER, Wilfrid
86289 Laboratoire Procédés et Ingénierie en Mécanique et Matériaux [PIMM]
SELMANE, M
101592 Institut des Nanosciences de Paris [INSP]
ABDELOUHADI, K
101592 Institut des Nanosciences de Paris [INSP]
PERRIÈRE, J
101592 Institut des Nanosciences de Paris [INSP]

URI
http://hdl.handle.net/10985/9948
DOI
10.1016/j.tsf.2015.06.034
Date
2015
Journal
Thin Solid Films

Abstract

The nature of the crystalline phase present in gallium oxide films grown by pulsed-laser deposition on c-cut sapphire substrate has been studied. Amorphous, polycrystalline or epitaxial gallium oxide films can be obtained depending upon the oxygen pressure during the growth in the 400–500 °C temperature range. Detailed pole figure measurements on epitaxial films demonstrate that the monoclinic β-Ga2O3 phase grows epitaxially on c-cut sapphire substrates at T = 500 °C under a 10− 5 mbar oxygen pressure. Two distinct textures were evidenced, i.e., the ( 2¯01) and (101) planes of the monoclinic β-Ga2O3 phase being parallel to the c-cut sapphire substrates. The corresponding epitaxial relationships were determined and interpreted in the frame of the domain matching epitaxy. The differences in the two textures were correlated to the various atomic configurations in the ( 2¯01) and (101) planes of the monoclinic β-Ga2O3 phase.

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