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UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application

Article dans une revue avec comité de lecture
Author
LE BOULBAR, E
199965 Groupe de recherches sur l'énergétique des milieux ionisés [GREMI]
MILLON, E
199965 Groupe de recherches sur l'énergétique des milieux ionisés [GREMI]
NTSOENZOK, E
HAKIM, B
53795 Conditions Extrêmes et Matériaux : Haute Température et Irradiation [CEMHTI]
SEILER, Wilfrid
86289 Laboratoire Procédés et Ingénierie en Mécanique et Matériaux [PIMM]
BOULMER-LEBORGNE, C
199965 Groupe de recherches sur l'énergétique des milieux ionisés [GREMI]
PERRIÈRE, J
101592 Institut des Nanosciences de Paris [INSP]

URI
http://hdl.handle.net/10985/10075
DOI
10.1016/j.optmat.2012.02.033
Date
2012
Journal
Optical Materials

Abstract

Undoped and Nd-doped titanium dioxide anatase and rutile films have been grown by pulsed-laser deposition at 700 °C under 0.1 mbar O2. By selecting adequate substrates, TiO2 films doped with 1, 2 or 5 at.% Nd were grown and constituted with polycrystalline rutile, highly oriented (2 0 0) rutile film, or oriented (0 0 4) anatase. An UV to NIR photon conversion is evidenced in the films. Indeed, intense and well-resolved emission lines from Nd3+ have been observed upon excitation above the TiO2 bandgap at room temperature. The sensitised emission of Nd3+ is found to be much efficient in rutile than in anatase structure. Low temperature photoluminescence measurements lead to fine resolved peaks corresponding to the Nd3+ 4f transitions with different spectral characteristic according to the host matrix used. Photoluminescence dependence temperature evidences that the light emission from Nd3+ in anatase-based films is probably influenced by the presence of self-trapped excitons or by orbital interaction. Mechanisms of sensitisation host to Nd3+ are proposed for both matrixes. Finally, the Nd dopant concentration and the microstructure of TiO2 rutile films are found to affect the photoluminescence emission intensity. Rutile film (2 0 0) oriented is the most adapted host matrix to sensitise 1 at.% Nd3+ ions for an emission around 1064 nm making such Nd-doped layers interesting for photon conversion by down shifting process.

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