UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application
TypeArticles dans des revues avec comité de lecture
Undoped and Nd-doped titanium dioxide anatase and rutile films have been grown by pulsed-laser deposition at 700 °C under 0.1 mbar O2. By selecting adequate substrates, TiO2 films doped with 1, 2 or 5 at.% Nd were grown and constituted with polycrystalline rutile, highly oriented (2 0 0) rutile film, or oriented (0 0 4) anatase. An UV to NIR photon conversion is evidenced in the films. Indeed, intense and well-resolved emission lines from Nd3+ have been observed upon excitation above the TiO2 bandgap at room temperature. The sensitised emission of Nd3+ is found to be much efficient in rutile than in anatase structure. Low temperature photoluminescence measurements lead to fine resolved peaks corresponding to the Nd3+ 4f transitions with different spectral characteristic according to the host matrix used. Photoluminescence dependence temperature evidences that the light emission from Nd3+ in anatase-based films is probably influenced by the presence of self-trapped excitons or by orbital interaction. Mechanisms of sensitisation host to Nd3+ are proposed for both matrixes. Finally, the Nd dopant concentration and the microstructure of TiO2 rutile films are found to affect the photoluminescence emission intensity. Rutile film (2 0 0) oriented is the most adapted host matrix to sensitise 1 at.% Nd3+ ions for an emission around 1064 nm making such Nd-doped layers interesting for photon conversion by down shifting process.
Showing items related by title, author, creator and subject.
NISTOR, M; MILLON, E; CACHONCINLLE, C; SEILER, Wilfrid; JEDRECY, N.; HEBERT, C; PERRIERE, J. (IOP Publishing, 2015)Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of ...
On the relevance of large scale pulsed-laser deposition: Evidence of structural heterogeneities in ZnO thin films PERRIÈRE, J; HEBERT, C; JEDRECY, N.; SEILER, Wilfrid; ZANELLATO, Olivier; PORTIER, X; PEREZ-CASERO, R; MILLON, E; NISTOR, M (AIP Publishing, 2014)Pulsed-laser deposition is known as a well-suited method for growing thin films of oxide compounds presenting a wide range of functional properties. A limitation of this method for industrial process is the very anisotropic ...
TRICOT, Sylvain; NISTOR, Magdalena; MILLON, Éric; BOULMER-LEBORGNE, Chantal; MANDACHE, Nicolae Bogdan; PERRIÉRE, Jacques; SEILER, Wilfried (Elsevier B.V, 2010)In this work, the pulsed electron beam deposition method (PED) is evaluated by studying the properties of ZnO thin films grown on c-cut sapphire substrates. The film composition, structure and surface morphology were ...
NISTOR, M; SEILER, Wilfrid; HEBERT, C; MATEI, E; PERRIÈRE, J (ELSEVIER, 2014)Indium oxide thin films were grown by pulsed electron beam deposition method at 500 °C on c-cut sapphire and (0 0 1) oriented LaAlO3 single crystal substrates in oxygen or argon gas. The effects of ambient gas and substrate ...
SEILER, Wilfrid; NISTOR, M; PERRIÈRE, J; HEBER, C (Elsevier, 2013)Indium oxide thin ﬁlms were grown by the pulsed electron beam deposition method on c-cut sapphire substrates at 10−2 mbar oxygen pressure and temperature up to 500 1C. Such conditions lead to the formation of dense, smooth ...