Epitaxial growth of gallium oxide films on c-cut sapphire substrate
Article dans une revue avec comité de lecture
Abstract
The nature of the crystalline phase present in gallium oxide films grown by pulsed-laser deposition on c-cut sapphire substrate has been studied. Amorphous, polycrystalline or epitaxial gallium oxide films can be obtained depending upon the oxygen pressure during the growth in the 400–500 °C temperature range. Detailed pole figure measurements on epitaxial films demonstrate that the monoclinic β-Ga2O3 phase grows epitaxially on c-cut sapphire substrates at T = 500 °C under a 10− 5 mbar oxygen pressure. Two distinct textures were evidenced, i.e., the ( 2¯01) and (101) planes of the monoclinic β-Ga2O3 phase being parallel to the c-cut sapphire substrates. The corresponding epitaxial relationships were determined and interpreted in the frame of the domain matching epitaxy. The differences in the two textures were correlated to the various atomic configurations in the ( 2¯01) and (101) planes of the monoclinic β-Ga2O3 phase.
Files in this item
Related items
Showing items related by title, author, creator and subject.
-
Article dans une revue avec comité de lecturePERRIÈRE, J; HEBERT, C; JEDRECY, N.; SEILER, Wilfrid; ZANELLATO, Olivier; PORTIER, X; PEREZ-CASERO, R; MILLON, E; NISTOR, M (American Institute of Physics, 2014)Pulsed-laser deposition is known as a well-suited method for growing thin films of oxide compounds presenting a wide range of functional properties. A limitation of this method for industrial process is the very anisotropic ...
-
Article dans une revue avec comité de lectureNISTOR, M; SEILER, Wilfrid; HEBERT, C; MATEI, E; PERRIÈRE, J (Elsevier, 2014)Indium oxide thin films were grown by pulsed electron beam deposition method at 500 °C on c-cut sapphire and (0 0 1) oriented LaAlO3 single crystal substrates in oxygen or argon gas. The effects of ambient gas and substrate ...
-
Article dans une revue avec comité de lectureLE BOULBAR, E; MILLON, E; NTSOENZOK, E; HAKIM, B; SEILER, Wilfrid; BOULMER-LEBORGNE, C; PERRIÈRE, J (Elsevier, 2012)Undoped and Nd-doped titanium dioxide anatase and rutile films have been grown by pulsed-laser deposition at 700 °C under 0.1 mbar O2. By selecting adequate substrates, TiO2 films doped with 1, 2 or 5 at.% Nd were grown ...
-
Article dans une revue avec comité de lectureNISTOR, M; MILLON, E; CACHONCINLLE, C; SEILER, Wilfrid; JEDRECY, N.; HEBERT, C; PERRIERE, J. (IOP Publishing, 2015)Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of ...
-
Article dans une revue avec comité de lectureSEILER, Wilfrid; NISTOR, M; PERRIÈRE, J; HEBER, C (2013)Indium oxide thin films were grown by the pulsed electron beam deposition method on c-cut sapphire substrates at 10−2 mbar oxygen pressure and temperature up to 500 1C. Such conditions lead to the formation of dense, smooth ...